A method for fabricating a superior oxide/nitride/oxide gate stack

T. C. Chang*, S. T. Yan, Po-Tsun Liu, M. C. Wang, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A superior oxide/nitride/oxide (ONO) gate stack was demonstrated. High density plasma chemical vapor deposition was used to deposit the silicon nitride layer instead of the conventional low-pressure chemical vapor deposition for silicon/oxide/nitride/oxide/silicon technology. The densified nitride layer was performed by high-temperature dry oxidation to form a thermally grown blocking oxide layer on the silicon nitride rather than a deposited oxide layer. The ONO gate stack shows large memory window, high breakdown voltage, and reliable endurance characteristics, which is a potential candidate for future nonvolatile memory technology.

原文English
頁(從 - 到)G138-G140
頁數3
期刊Electrochemical and Solid-State Letters
7
發行號7
DOIs
出版狀態Published - 2004

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