A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

Tzu Yueh Chang*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage Voc. The measured Voc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm2. This Voc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the Voc enhancement of MIS solar cells by using a stacking structure.

原文English
文章編號5599956
頁(從 - 到)1419-1421
頁數3
期刊Ieee Electron Device Letters
31
發行號12
DOIs
出版狀態Published - 12月 2010

指紋

深入研究「A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure」主題。共同形成了獨特的指紋。

引用此