A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal&#x2013;Insulator&#x2013;Semiconductor High-Electron-Mobility Transistors

Yong Hwa Wen, Tz Wun Wang, Tzu Hsien Yang, Sheng Hsi Hung, Kuo Lin Zheng, Ke Horng Chen, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

研究成果: Article同行評審

摘要

This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal&#x2013;insulator&#x2013;semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS process, the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and <inline-formula> <tex-math notation="LaTeX">$dV_{\mathrm{DS}}$</tex-math> </inline-formula>/dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm<inline-formula> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula>.

原文English
頁(從 - 到)1-11
頁數11
期刊IEEE Journal of Solid-State Circuits
DOIs
出版狀態Accepted/In press - 2022

指紋

深入研究「A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal&#x2013;Insulator&#x2013;Semiconductor High-Electron-Mobility Transistors」主題。共同形成了獨特的指紋。

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