摘要
This paper proposes a new double-edge-triggered implicitly level-converting flip-flop, suitable for a low-power and low-voltage design. The design employs a sense amplifier architecture to reduce the delay and power consumption. Experimentally, when implemented with a 130-nm, single-Vt and 0.84V VDD process, it achieves 64% power-delay product (PDP) improvement, and moreover, 78% PDP improvement when implemented with a mixed-Vt technology, as compared to that of the classic double-edge-triggered flip-flop design.
原文 | English |
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頁(從 - 到) | 1351-1355 |
頁數 | 5 |
期刊 | IEICE Transactions on Electronics |
卷 | E96-C |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 1 1月 2013 |