A lossy substrate model is developed to accurately simulate the measured RF noise of 80 nm, super-100 GHz fT nMOSFETs. Substrate RLC network built in the model plays a key role responsible for the nonlinear frequency response of noise in 1-18 GHz regime, which didn't follow the typical thermal noise theory. Good match with the measured S-parameters, Y-parameters, and NFmin before de-embedding proves the lossy substrate model. The intrinsic RF noise can be extracted easily and precisely by the lossy substrate de-embedding using circuit simulation. The accuracy has been justified by good agreement in terms of Id, gm, Y-parameters, and f T under wide range of bias conditions and operating frequencies. The extracted intrinsic NFmin as low as 0.6-0.7dB at 10GHz indicates the advantages of super-100 GHz fT offered by the sub-100nm multi-finger nMOS. The frequency dependence of noise resistance Rn suggests the substrate RC coupling induced excess channel thermal noise apparent in 1-10 GHz regime. The study provides useful guideline for low noise and low power design by using sub-100nm RF CMOS technology.
|頁（從 - 到）||145-148|
|期刊||Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium|
|出版狀態||Published - 15 11月 2005|
|事件||2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States|
持續時間: 12 6月 2005 → 14 6月 2005