TY - JOUR
T1 - A lossy substrate model for sub-100nm, super-100 GHz fT RF CMOS noise extraction and modeling
AU - Guo, Jyh-Chyurn
AU - Lin, Y. M.
PY - 2005
Y1 - 2005
N2 - A lossy substrate model is developed to accurately simulate the measured RF noise of 80 nm, super-100 GHz fT nMOSFETs. Substrate RLC network built in the model plays a key role responsible for the nonlinear frequency response of noise in 1-18 GHz regime, which didn't follow the typical thermal noise theory. Good match with the measured S-parameters, Y-parameters, and NFmin before de-embedding proves the lossy substrate model. The intrinsic RF noise can be extracted easily and precisely by the lossy substrate de-embedding using circuit simulation. The accuracy has been justified by good agreement in terms of Id, gm, Y-parameters, and f T under wide range of bias conditions and operating frequencies. The extracted intrinsic NFmin as low as 0.6-0.7dB at 10GHz indicates the advantages of super-100 GHz fT offered by the sub-100nm multi-finger nMOS. The frequency dependence of noise resistance Rn suggests the substrate RC coupling induced excess channel thermal noise apparent in 1-10 GHz regime. The study provides useful guideline for low noise and low power design by using sub-100nm RF CMOS technology.
AB - A lossy substrate model is developed to accurately simulate the measured RF noise of 80 nm, super-100 GHz fT nMOSFETs. Substrate RLC network built in the model plays a key role responsible for the nonlinear frequency response of noise in 1-18 GHz regime, which didn't follow the typical thermal noise theory. Good match with the measured S-parameters, Y-parameters, and NFmin before de-embedding proves the lossy substrate model. The intrinsic RF noise can be extracted easily and precisely by the lossy substrate de-embedding using circuit simulation. The accuracy has been justified by good agreement in terms of Id, gm, Y-parameters, and f T under wide range of bias conditions and operating frequencies. The extracted intrinsic NFmin as low as 0.6-0.7dB at 10GHz indicates the advantages of super-100 GHz fT offered by the sub-100nm multi-finger nMOS. The frequency dependence of noise resistance Rn suggests the substrate RC coupling induced excess channel thermal noise apparent in 1-10 GHz regime. The study provides useful guideline for low noise and low power design by using sub-100nm RF CMOS technology.
KW - Lossy substrate
KW - Noise
KW - RF CMOS
KW - RLC network
UR - http://www.scopus.com/inward/record.url?scp=27644534506&partnerID=8YFLogxK
U2 - 10.1109/RFIC.2005.1489613
DO - 10.1109/RFIC.2005.1489613
M3 - Conference article
AN - SCOPUS:27644534506
SN - 1529-2517
SP - 145
EP - 148
JO - Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
JF - Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
M1 - RMO2C-2
T2 - 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers
Y2 - 12 June 2005 through 14 June 2005
ER -