A latchup-immune and robust SCR device for ESD protection in 0.25-μ m 5-V CMOS process

Yu Ching Huang, Ming-Dou Ker

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μ m 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.

原文English
文章編號6491440
頁(從 - 到)674-676
頁數3
期刊IEEE Electron Device Letters
34
發行號5
DOIs
出版狀態Published - 5 四月 2013

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