TY - JOUR
T1 - A latchup-immune and robust SCR device for ESD protection in 0.25-μ m 5-V CMOS process
AU - Huang, Yu Ching
AU - Ker, Ming-Dou
PY - 2013/4/5
Y1 - 2013/4/5
N2 - Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μ m 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.
AB - Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μ m 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.
KW - Electrostatic discharges (ESD)
KW - latchup
KW - silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=84877000271&partnerID=8YFLogxK
U2 - 10.1109/LED.2013.2252456
DO - 10.1109/LED.2013.2252456
M3 - Article
AN - SCOPUS:84877000271
SN - 0741-3106
VL - 34
SP - 674
EP - 676
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 5
M1 - 6491440
ER -