A L.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS

Zuo-Min Tsai *, Hsin Chiang Liao, Yuan Hong Hsiao, Huei Wang, Jenny Yi Chun Liu, Mau-Chung Chang, Yu Ming Teng, Guo Wei Huang

*此作品的通信作者

研究成果: Conference contribution同行評審

20 引文 斯高帕斯(Scopus)

摘要

A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with L.2 V supply at 140 GHz in a compact size of 0.38 mm 2. The peak power-added efficiency is 14.6% with 115.2 mW dc power.

原文English
主出版物標題IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
出版狀態Published - 3 十月 2012
事件2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
持續時間: 17 六月 201222 六月 2012

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
ISSN(列印)0149-645X

Conference

Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
國家/地區Canada
城市Montreal, QC
期間17/06/1222/06/12

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