@inproceedings{9fad820df19d42e5b3c09d5542b795e7,
title = "A high-voltage-tolerant stimulator realized in the low-voltage CMOS process for cochlear implant",
abstract = "A biomedical stimulator with four high-voltagetolerant output channels, combined with on-chip positive high voltage generator, is proposed. For the purpose of integration with other circuit blocks into a system-on-chip (SoC) for cochlear implant biomedical applications, this design has been realized with the 1.8-V/3.3-V transistors in a 0.18-μm CMOS process. This stimulator only needs one single supply voltage of 1.8 V, but the maximum stimulation voltage can be as high as 7 V. The dynamic bias technique and stacked MOS configuration are used to implement this stimulator in the low-voltage CMOS process, without causing the issues of electrical overstress and gate-oxide reliability during circuit operation.",
author = "Lin, {Kuan Yu} and Ming-Dou Ker and Lin, {Chun Yu}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/ISCAS.2014.6865109",
language = "English",
isbn = "9781479934324",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "237--240",
booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",
address = "United States",
note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}