A high thermal stability ohmic contact for GaN-based devices

Keyphrases

• Ohmic Contact 100%
• High Thermal Stability 100%
• Gallium Nitride 100%
• GaN HEMT 66%
• Aluminum Gallium Nitride (AlGaN) 66%
• Cointegration 66%
• Gallium Nitride Device 66%
• Invisible 33%
• High Efficiency 33%
• Semiconductor Industry 33%
• High Temperature 33%
• Single chip 33%
• Highly Stable 33%
• Binding Energy 33%
• High Electron Mobility Transistor 33%
• Complementary Metal Oxide Semiconductor 33%
• Power Device 33%
• High Power Efficiency 33%
• Ohmic 33%
• Titanium Nitride 33%
• Au-free 33%
• Interface Chemistry 33%
• Logic ICs 33%
• Chemistry Analysis 33%
• Ohmic Junction 33%
• STEM-EELS 33%

Material Science

• Thermal Stability 100%
• Gallium Nitride 100%
• Transistor 42%
• Electron Mobility 42%
• Electronic Circuit 14%
• Nitride Compound 14%
• Titanium 14%
• Complementary Metal-Oxide-Semiconductor Device 14%
• Power Device 14%

Chemical Engineering

• Gallium Nitride 100%
• Oxide Semiconductors 14%
• Titanium Nitride 14%