A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN

Jehn Ou*, Yung Chung Pan, Wen Hsiung Lee, Chen Ke Shu, Heng Ching Lin, Ming Chih Lee, Wen Hsiung Chen, Chung I. Cluang, Horng Chano, Wei-Kuo Chen

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.

原文English
頁(從 - 到)4958-4961
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
發行號9 A
DOIs
出版狀態Published - 1999

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