@inproceedings{8610fb4bda7241b5a2997870f64bf8a6,
title = "A High Survivability Low-Noise Amplifier for V-band Applications",
abstract = "In this paper, we report a GaN-based low-noise amplifier (LNA) with high survivability targeting for V-band applications. This LNA was measured to deliver a small-signal gain of 23.5 dB and a noise figure (NF) of 3.3 dB at 60 GHz. The ruggedness of the LNA was investigated experimentally by injecting continuous wave (CW) signal at the input port with various power levels and durations. While stressing up to the input level of 25.1 dBm at 60 GHz for 16 hours, the LNA showed a 1.5-dB decrease in linear gain, and 0.3-dB increase in noise figure. The experimental results have demonstrated a great potential for the proposed LNA to be implemented in highly-reliable systems targeting for operation at V-band frequencies.",
keywords = "GaN-on-SiC, low-noise amplifier (LNA), RF stress, survivability, V-band",
author = "Tsao, {Yi Fan} and Yuan Wang and Chiu, {Ping Hsun} and Hsu, {Heng Tung}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 9th RFM IEEE International RF and Microwave Conference, RFM 2022 ; Conference date: 19-12-2022 Through 21-12-2022",
year = "2022",
doi = "10.1109/RFM56185.2022.10065307",
language = "English",
series = "Proceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022",
address = "美國",
}