A High Survivability Low-Noise Amplifier for V-band Applications

Yi Fan Tsao, Yuan Wang, Ping Hsun Chiu, Heng Tung Hsu*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, we report a GaN-based low-noise amplifier (LNA) with high survivability targeting for V-band applications. This LNA was measured to deliver a small-signal gain of 23.5 dB and a noise figure (NF) of 3.3 dB at 60 GHz. The ruggedness of the LNA was investigated experimentally by injecting continuous wave (CW) signal at the input port with various power levels and durations. While stressing up to the input level of 25.1 dBm at 60 GHz for 16 hours, the LNA showed a 1.5-dB decrease in linear gain, and 0.3-dB increase in noise figure. The experimental results have demonstrated a great potential for the proposed LNA to be implemented in highly-reliable systems targeting for operation at V-band frequencies.

原文English
主出版物標題Proceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665489775
DOIs
出版狀態Published - 2022
事件9th RFM IEEE International RF and Microwave Conference, RFM 2022 - Kuala Lumpur, Malaysia
持續時間: 19 12月 202221 12月 2022

出版系列

名字Proceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022

Conference

Conference9th RFM IEEE International RF and Microwave Conference, RFM 2022
國家/地區Malaysia
城市Kuala Lumpur
期間19/12/2221/12/22

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