@inproceedings{629219a1fc7343aa8706812195a90315,
title = "A High-Linearity GaN-on-Si Power Amplifier for 2.4-GHz WLAN Applications",
abstract = "The high impedance of a GaN device when operating at high voltage and low current is more resilient to the loss caused by the on-chip inductor and makes a fully integrated GaN-on-Si power amplifier possible. This paper demonstrates a 2.4 GHz two-stage power amplifier for WLAN applications using low-cost GaN-on-Si technology with a high resistivity silicon substrate and through substrate vias. The high-linearity power amplifier at a 15 V supply voltage shows 22 dBm output power with -35 dB EVM at 2.5 GHz when tested with 802.11ac VHT40 MCS9 signals. The quiescent currents are 13 mA and 27 mA while the operating currents at 22 dBm output power with -35 dB EVM are 26 mA and 65 mA for the driver stage and power stage, respectively.",
keywords = "802.11ac, GaN, GaN-on-Si, GaN-on-SiC, HEMT, high resistivity, high voltage, power amplifier, WLAN",
author = "Chinchun Meng and Lei, {Fang Yu} and Chieh Lee and Lin, {Feng Chuan} and Kuo, {Yu Lin}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 31st Asia-Pacific Microwave Conference, APMC 2023 ; Conference date: 05-12-2023 Through 08-12-2023",
year = "2023",
doi = "10.1109/APMC57107.2023.10439930",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "482--484",
booktitle = "2023 Asia-Pacific Microwave Conference, APMC 2023",
address = "美國",
}