A high isolation CMFB downconversion micromixer using 0.18-μm deep N-well CMOS technology

Chin-Chun Meng*, S. K. Xu, T. H. Wu, M. H. Chao, G. W. Huang


研究成果: Conference article同行評審

19 引文 斯高帕斯(Scopus)


CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1db=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz is demonstrated in this paper by using 0.18 μm deep N-well CMOS technology. The Input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downeonversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF Isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downeonversion micromixer used here has intrinsically single-to-differential Input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.

原文American English
頁(從 - 到)619-622
期刊IEEE MTT-S International Microwave Symposium Digest
出版狀態Published - 9 6月 2003
事件2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States
持續時間: 8 6月 200310 6月 2003


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