A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding

Yu-Ting Cheng*, Liwei Lin, Khalil Najafi

*此作品的通信作者

研究成果: Article同行評審

76 引文 斯高帕斯(Scopus)

摘要

A hermetic package based on localized aluminum/silicon-to-glass bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-μm-wide polysilicon on-chip microheaters can raise the temperature of the bonding region to 700°C bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128°C. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure.

原文English
頁(從 - 到)392-399
頁數8
期刊Journal of Microelectromechanical Systems
10
發行號3
DOIs
出版狀態Published - 9月 2001

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