@inproceedings{e44c84e7a0064b6594cb04422b460c09,
title = "A GaN-based Doherty Power Amplifier for 5G Basestation Applications",
abstract = "This paper presents a highly efficient and linear Doherty power amplifier targeting base station applications for the fifth-generation (5G) communication systems. With the adoption of self-packaged 0.25-μm GaN/SiC high-electron mobility transistors (HEMTs), a quasi-Doherty power amplifier (P A) featuring an operating frequency from 3.4-3.6 GHz was realized. The fabricated P A delivered a saturated output power Psat) of 50.5 dBm, and a peak power-added-efficiency (P AE) of 60.6% while excited by continuous-wave (CW) signal at 3.5 GHz, respectively.",
keywords = "5G, basestation, Doherty, Gallium nitride (GaN), millimeter-wave",
author = "Tsao, {Yi Fan} and Hsu, {Heng Tung} and Huang, {Jiun Jie}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 ; Conference date: 20-05-2024 Through 22-05-2024",
year = "2024",
doi = "10.1109/GSMM61775.2024.10553067",
language = "English",
series = "15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "228--230",
booktitle = "15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 - Proceedings",
address = "美國",
}