A fully-differential subthreshold SRAM Cell with auto-compensation

Mu Tien Chang*, Wei Hwang

*此作品的通信作者

研究成果: Conference contribution同行評審

11 引文 斯高帕斯(Scopus)

摘要

SRAM cell stability is a major challenge in subthreshold SRAM design. In this paper, a robust, fully-differential subthreshold 10-transistors SRAM cell with auto-compensation is proposed. With the auto-compensation mechanism, the proposed cell exhibits better hold static noise margin (SNM). The cell structure also prevents storage nodes from bitline noise interference, thus improving read SNM. Moreover, better write ability is achieved by applying write assist technique. Based on UMC 90nm CMOS technology, simulation results shows that at 200mV supply voltage, the proposed cell has 1.22X hold SNM improvement, 2.09X read SNM improvement, and 2.03X write margin improvement compared to the conventional 6T SRAM cell.

原文English
主出版物標題Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
頁面1771-1774
頁數4
DOIs
出版狀態Published - 1 十二月 2008
事件APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems - Macao, China
持續時間: 30 十一月 20083 十二月 2008

出版系列

名字IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Conference

ConferenceAPCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
國家/地區China
城市Macao
期間30/11/083/12/08

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