A flip-chip packaged 80-nm In 0.7 Ga 0.3 As MHEMT for millimeter-wave low-noise applications

Chin Te Wang; Chien I. Kuo; Heng-Tung Hsu; Edward Yi Chang; Li Han Hsu; Wee Chin Lim; Che Yang Chiang; Szu Ping Tsai; Guo Wei Huang

doi:10.1016/j.mee.2010.10.010

A flip-chip packaged 80-nm In _0.7 Ga _0.3 As MHEMT for millimeter-wave low-noise applications

Chin Te Wang, Chien I. Kuo, Heng-Tung Hsu, Edward Yi Chang, Li Han Hsu, Wee Chin Lim, Che Yang Chiang, Szu Ping Tsai, Guo Wei Huang

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this paper, we present a flip-chip 80-nm In_0.7Ga _0.3As MHEMT device on an alumina (Al₂O₃) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high I_DS = 435 mA/mm at V_DS = 1.5 V, high g_m = 930 mS/mm at V_DS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NF_min) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.

原文	English
頁（從 - 到）	183-186
頁數	4
期刊	Microelectronic Engineering
卷	88
發行號	2
DOIs	https://doi.org/10.1016/j.mee.2010.10.010
出版狀態	Published - 2月 2011

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10.1016/j.mee.2010.10.010

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@article{605f3de7736b4497ae2ba35f781af43b,

title = "A flip-chip packaged 80-nm In 0.7 Ga 0.3 As MHEMT for millimeter-wave low-noise applications",

abstract = "In this paper, we present a flip-chip 80-nm In0.7Ga 0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.",

keywords = "Flip-chip, HEMTs, High frequency package, InGaAs-channel",

author = "Wang, {Chin Te} and Kuo, {Chien I.} and Heng-Tung Hsu and Chang, {Edward Yi} and Hsu, {Li Han} and Lim, {Wee Chin} and Chiang, {Che Yang} and Tsai, {Szu Ping} and Huang, {Guo Wei}",

year = "2011",

month = feb,

doi = "10.1016/j.mee.2010.10.010",

language = "English",

volume = "88",

pages = "183--186",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - A flip-chip packaged 80-nm In 0.7 Ga 0.3 As MHEMT for millimeter-wave low-noise applications

AU - Wang, Chin Te

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Chang, Edward Yi

AU - Hsu, Li Han

AU - Lim, Wee Chin

AU - Chiang, Che Yang

AU - Tsai, Szu Ping

AU - Huang, Guo Wei

PY - 2011/2

Y1 - 2011/2

N2 - In this paper, we present a flip-chip 80-nm In0.7Ga 0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.

AB - In this paper, we present a flip-chip 80-nm In0.7Ga 0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.

KW - Flip-chip

KW - HEMTs

KW - High frequency package

KW - InGaAs-channel

UR - http://www.scopus.com/inward/record.url?scp=78649989120&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2010.10.010

DO - 10.1016/j.mee.2010.10.010

M3 - Article

AN - SCOPUS:78649989120

SN - 0167-9317

VL - 88

SP - 183

EP - 186

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2

ER -

A flip-chip packaged 80-nm In 0.7 Ga 0.3 As MHEMT for millimeter-wave low-noise applications

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A flip-chip packaged 80-nm In _0.7 Ga _0.3 As MHEMT for millimeter-wave low-noise applications