A Dynamic threshold voltage mosfet (DTMOS) for very low voltage operation

Fariborz Assaderaghi; Stephen Parke; Dennis Sinitsky; Jeffrey Bokor; Ping K. Ko; Chen-Ming Hu

doi:10.1109/9780470545058.sect4

A Dynamic threshold voltage mosfet (DTMOS) for very low voltage operation

Fariborz Assaderaghi
, Stephen Parke
, Dennis Sinitsky
, Jeffrey Bokor
, Ping K. Ko
, Chen-Ming Hu

國際半導體產業學院

研究成果: Chapter › 同行評審

摘要

A new mode of operation for Silicon-On-Insulator (SOl) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V_dd. On the other hand, v_tis high at V_gs= 0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V_dd= 0.5 V

原文	English
主出版物標題	Low-Power CMOS Design
發行者	Wiley-IEEE Press
頁面	121-123
頁數	3
ISBN（電子）	9780470545058
ISBN（列印）	9780780334298
DOIs	https://doi.org/10.1109/9780470545058.sect4
出版狀態	Published - 1 1月 1998

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10.1109/9780470545058.sect4

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AU - Hu, Chen-Ming

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AB - A new mode of operation for Silicon-On-Insulator (SOl) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low Vdd. On the other hand, vtis high at Vgs= 0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to Vdd= 0.5 V

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A Dynamic threshold voltage mosfet (DTMOS) for very low voltage operation

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