A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Todd G. Mckenzie, Yi-Ming Li*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson's equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I-V curves comparing the analytic model to experimental data are shown.

原文English
頁(從 - 到)144-147
頁數4
期刊International Journal of Computational Science and Engineering
2
發行號3-4
DOIs
出版狀態Published - 2006

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