A dopant-related defect in Te-doped AIInP

Yu Rue Wu; Wei Jer Sung; Tzu Chi Wen; Shih Chang Lee; Wei-I Lee

doi:10.1143/jjap.38.4720

A dopant-related defect in Te-doped AIInP

Yu Rue Wu^*, Wei Jer Sung, Tzu Chi Wen, Shih Chang Lee, Wei-I Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A deep level in Te-doped Al_0.5In_0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-dopcd AIInP is verified to be a dopant-related defect.

原文	English
頁（從 - 到）	4720-4721
頁數	2
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	38
發行號	8 B
DOIs	https://doi.org/10.1143/jjap.38.4720
出版狀態	Published - 15 8月 1999

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title = "A dopant-related defect in Te-doped AIInP",

abstract = "A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-dopcd AIInP is verified to be a dopant-related defect.",

keywords = "AiinP, DLTS, Deep level, Defect, Depth profile measurement, Dopant, Te",

author = "Wu, {Yu Rue} and Sung, {Wei Jer} and Wen, {Tzu Chi} and Lee, {Shih Chang} and Wei-I Lee",

year = "1999",

month = aug,

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doi = "10.1143/jjap.38.4720",

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T1 - A dopant-related defect in Te-doped AIInP

AU - Wu, Yu Rue

AU - Sung, Wei Jer

AU - Wen, Tzu Chi

AU - Lee, Shih Chang

AU - Lee, Wei-I

PY - 1999/8/15

Y1 - 1999/8/15

N2 - A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-dopcd AIInP is verified to be a dopant-related defect.

AB - A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-dopcd AIInP is verified to be a dopant-related defect.

KW - AiinP

KW - DLTS

KW - Deep level

KW - Defect

KW - Depth profile measurement

KW - Dopant

KW - Te

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DO - 10.1143/jjap.38.4720

M3 - Article

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SN - 0021-4922

VL - 38

SP - 4720

EP - 4721

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 B

ER -

A dopant-related defect in Te-doped AIInP

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