A Design Parametric Effect Study on Floating Guard Ring for 1200V SiC Power MOSFET Application

Chia Lung Hung*, Yi Kai Hsiao, Hao Chung Kuo

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A study on the simulation and fabrication of 1200 V floating guard rings with different design parameters, aimed at protecting 4H-SiC VDMOSFETs for high power ratings, is presented. The comprehensive parametric effects of the guard ring on the breakdown characteristics have been thoroughly investigated. The breakdown characteristics of various guard ring structures were simulated using TCAD (Technology Computer Aided Design) simulation and measured on the fabricated devices. A concise guideline for designing floating guard rings with high breakdown voltage capability is provided. Finally, it is demonstrated that the breakdown voltage of the fabricated guard ring can reach up to 1560 V for 1200 V applications.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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