@inproceedings{c9b40e31c5a64d119115c4382d33c801,
title = "A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor",
abstract = "A physical model is derived to characterize the thermal safe-operating area (T-SOA) of power transistor. This model provides a concise methodology to get the precise and instant solutions of the temperature, and time to failure corresponding to IV for power transistor during the T-SOA measurement.",
keywords = "Electrothermal (ETO), Joule-heating, Power Transistor, Thermal Runaway, Thermal Safe-Operating Area (TSOA)",
author = "Lee, {Jian Hsing} and Lin, {Gong Kai} and Chen, {Chun Chih} and Chen, {Li Fan} and Wang, {Chien Wei} and Huang, {Shao Chang} and Li, {Ching Ho} and Liao, {Chih Cherng} and Chuang, {Jung Tsun} and Chen, {Ke Horng}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10117633",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
address = "United States",
}