TY - GEN
T1 - A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering
AU - Lam, Kai Tak
AU - Da, Haixia
AU - Chin, Sai Kong
AU - Samudra, G.
AU - Yeo, Yee Chia
AU - Liang, Gengchiau
PY - 2010
Y1 - 2010
N2 - Novel device structures and electronic materials are required to further enhance the performance of digital circuits after the current MOSFET technology reaches its physical limits. While tunneling mechanism degrades the short channel MOSFET performance, it can be utilized as the major device operation in tunneling field-effect transistors (TFET) with promising features such as lower sub-threshold swing and OFF-state current (IOFF). Furthermore, semiconducting graphene nanoribbon (GNR) has been proposed as a potential electronic material for TFET application due to its unique properties such as ultra-thin body structure and high carrier mobility. A small bandgap (E G) material near the source-channel interface can be introduced to form heterojunction (HJ) which leads to a larger ION [1-3]. Therefore, in this work, we investigate the impact of the length and E G of this HJ region on the device performance of graphene nanoribbon TFET.
AB - Novel device structures and electronic materials are required to further enhance the performance of digital circuits after the current MOSFET technology reaches its physical limits. While tunneling mechanism degrades the short channel MOSFET performance, it can be utilized as the major device operation in tunneling field-effect transistors (TFET) with promising features such as lower sub-threshold swing and OFF-state current (IOFF). Furthermore, semiconducting graphene nanoribbon (GNR) has been proposed as a potential electronic material for TFET application due to its unique properties such as ultra-thin body structure and high carrier mobility. A small bandgap (E G) material near the source-channel interface can be introduced to form heterojunction (HJ) which leads to a larger ION [1-3]. Therefore, in this work, we investigate the impact of the length and E G of this HJ region on the device performance of graphene nanoribbon TFET.
UR - https://www.scopus.com/pages/publications/77957601423
U2 - 10.1109/DRC.2010.5551931
DO - 10.1109/DRC.2010.5551931
M3 - Conference contribution
AN - SCOPUS:77957601423
SN - 9781424478705
T3 - Device Research Conference - Conference Digest, DRC
SP - 79
EP - 80
BT - 68th Device Research Conference, DRC 2010
T2 - 68th Device Research Conference, DRC 2010
Y2 - 21 June 2010 through 23 June 2010
ER -