A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Yuan Hung Tseng; Tsung Han Wu; Bing-Yue Tsui; Cheng Tyng Yen; Chien Chung Hung; Chwan Ying Lee

doi:10.7567/JJAP.56.04CR02

A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Yuan Hung Tseng, Tsung Han Wu, Bing-Yue Tsui, Cheng Tyng Yen, Chien Chung Hung, Chwan Ying Lee

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N2/N2O flow ratios. The collision partner, N2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.

原文	English
文章編號	04CR02
期刊	Japanese journal of applied physics
卷	56
發行號	4
DOIs	https://doi.org/10.7567/JJAP.56.04CR02
出版狀態	Published - 4月 2017

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@article{1528c9382e2f421b86fd6bad9546632a,

title = "A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient",

abstract = "The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N2/N2O flow ratios. The collision partner, N2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.",

author = "Tseng, {Yuan Hung} and Wu, {Tsung Han} and Bing-Yue Tsui and Yen, {Cheng Tyng} and Hung, {Chien Chung} and Lee, {Chwan Ying}",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

year = "2017",

month = apr,

doi = "10.7567/JJAP.56.04CR02",

language = "English",

volume = "56",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

AU - Tseng, Yuan Hung

AU - Wu, Tsung Han

AU - Tsui, Bing-Yue

AU - Yen, Cheng Tyng

AU - Hung, Chien Chung

AU - Lee, Chwan Ying

PY - 2017/4

Y1 - 2017/4

N2 - The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N2/N2O flow ratios. The collision partner, N2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.

AB - The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N2/N2O flow ratios. The collision partner, N2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.

UR - http://www.scopus.com/inward/record.url?scp=85017183815&partnerID=8YFLogxK

U2 - 10.7567/JJAP.56.04CR02

DO - 10.7567/JJAP.56.04CR02

M3 - Article

AN - SCOPUS:85017183815

SN - 0021-4922

VL - 56

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4

M1 - 04CR02

ER -

A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

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