A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang; Chin Han Chung; Wei Yu; Cheng Jun Ma; Sih Rong Wu; Abhisek Dixit; Ching Ting Lee; Edward Yi Chang

doi:10.1109/TDMR.2022.3173000

A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang^*, Chin Han Chung, Wei Yu, Cheng Jun Ma, Sih Rong Wu, Abhisek Dixit, Ching Ting Lee, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

原文	English
頁（從 - 到）	276-281
頁數	6
期刊	IEEE Transactions on Device and Materials Reliability
卷	22
發行號	2
DOIs	https://doi.org/10.1109/TDMR.2022.3173000
出版狀態	Published - 1 6月 2022

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10.1109/TDMR.2022.3173000

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title = "A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT",

abstract = "In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.",

keywords = "dynamic RON, GaN on Si, in-situ SiN, MISHEMTs, power device, simulation, total ionizing dose, VTH shifting",

author = "Yang, {Chih Yi} and Chung, {Chin Han} and Wei Yu and Ma, {Cheng Jun} and Wu, {Sih Rong} and Abhisek Dixit and Lee, {Ching Ting} and Chang, {Edward Yi}",

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T1 - A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

AU - Yang, Chih Yi

AU - Chung, Chin Han

AU - Yu, Wei

AU - Ma, Cheng Jun

AU - Wu, Sih Rong

AU - Dixit, Abhisek

AU - Lee, Ching Ting

AU - Chang, Edward Yi

PY - 2022/6/1

Y1 - 2022/6/1

N2 - In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

AB - In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

KW - dynamic RON

KW - GaN on Si

KW - in-situ SiN

KW - MISHEMTs

KW - power device

KW - simulation

KW - total ionizing dose

KW - VTH shifting

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U2 - 10.1109/TDMR.2022.3173000

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M3 - Article

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SN - 1530-4388

VL - 22

SP - 276

EP - 281

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 2

ER -

A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

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