A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's

Ta-Hui Wang*, Lu Ping Chiang, Nian Kai Zous, Charng Feng Hsu, Li Yuan Huang, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article › 同行評審

43 引文 斯高帕斯（Scopus）

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Keyphrases

Engineering

Material Science