A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
Ta-Hui Wang*, Lu Ping Chiang, Nian Kai Zous, Charng Feng Hsu, Li Yuan Huang, Tien-Sheng Chao
*此作品的通信作者
研究成果: Article › 同行評審
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引文
斯高帕斯(Scopus)