@inproceedings{50ee2202b5524323a42a28e39a4147be,
title = "A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions",
abstract = "A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/ capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.",
author = "Huang, {Hsin Hui} and Wu, {Tzu Yun} and Chu, {Yueh Hua} and Wu, {Ming Hung} and Hsu, {Chien Hua} and Lee, {Heng Yuan} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Tuo-Hung Hou",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993592",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
address = "United States",
note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
}