A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions

Hsin Hui Huang, Tzu Yun Wu, Yueh Hua Chu, Ming Hung Wu, Chien Hua Hsu, Heng Yuan Lee, Shyh Shyuan Sheu, Wei Chung Lo, Tuo-Hung Hou*

*此作品的通信作者

研究成果: Conference contribution同行評審

10 引文 斯高帕斯(Scopus)

摘要

A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/ capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.

原文English
主出版物標題2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁數4
ISBN(電子)9781728140315
DOIs
出版狀態Published - 12月 2019
事件65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
持續時間: 7 12月 201911 12月 2019

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(列印)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家/地區United States
城市San Francisco
期間7/12/1911/12/19

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