A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Y. T. Tang*, C. L. Fang, Y. C. Kao, N. Modolo, C. J. Su, Tian-Li Wu, K. H. Kao, P. J. Wu, S. W. Hsaio, Artur Useinov, Pin Su, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

*此作品的通信作者

研究成果: Conference contribution同行評審

15 引文 斯高帕斯(Scopus)

摘要

This paper clarifies for the first time the origin of ferroelectricity in the Negative Capacitance Field-Effect Transistors (NCFETs) by molecular dynamics (MD) simulation. MD simulation considering atomic interactions between all atoms enables accurate predictions for the microstructure even at all interfaces. By incorporating the results from MD simulations into a kinetic model, it is able to predict the conditions of crystallization and phase transition during RTP and cooling processes that govern ferroelectricity in FETs. Our simulation reveals that the comparable interfacial energy between o-and t-phase, and in-plane tensile stress from metal capping or interfacial layers (ILs) enable more phase transition from t-to o-phase, and more ferroelectricity in NCFETs. Finally, design methodology to maintain the electric variation of NCFETs is also proposed.

原文English
主出版物標題2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
發行者Institute of Electrical and Electronics Engineers Inc.
章節T17-2
頁面T222-T223
頁數2
ISBN(電子)9784863487178
DOIs
出版狀態Published - 6月 2019
事件39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
持續時間: 9 6月 201914 6月 2019

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2019-June
ISSN(列印)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
國家/地區Japan
城市Kyoto
期間9/06/1914/06/19

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