TY - GEN
T1 - A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET
AU - Lin, Po Shao
AU - Tsui, Bing-Yue
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.
AB - Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.
KW - Band-to-band tunneling (BTBT)
KW - Fin FET
KW - Subthreshold swing
KW - Tunnel FET
UR - http://www.scopus.com/inward/record.url?scp=85043510514&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2017.8126540
DO - 10.1109/EDSSC.2017.8126540
M3 - Conference contribution
AN - SCOPUS:85043510514
T3 - EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
SP - 1
EP - 2
BT - EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Y2 - 18 October 2017 through 20 October 2017
ER -