A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET

Po Shao Lin, Bing-Yue Tsui

    研究成果: Conference contribution同行評審

    摘要

    Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.

    原文English
    主出版物標題EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面1-2
    頁數2
    ISBN(電子)9781538629079
    DOIs
    出版狀態Published - 1 12月 2017
    事件13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
    持續時間: 18 10月 201720 10月 2017

    出版系列

    名字EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    2017-January

    Conference

    Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
    國家/地區Taiwan
    城市Hsinchu
    期間18/10/1720/10/17

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