A comparison study on the Al-based interfacial layers for Ge MIS devices

Yi Gin Yang; Bing-Yue Tsui

doi:10.1109/IPFA.2015.7224400

A comparison study on the Al-based interfacial layers for Ge MIS devices

Yi Gin Yang, Bing-Yue Tsui

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.

原文	English
主出版物標題	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	336-339
頁數	4
ISBN（電子）	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224400
出版狀態	Published - 25 8月 2015
事件	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, 台灣持續時間: 29 6月 2015 → 2 7月 2015

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
卷	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家/地區	台灣
城市	Hsinchu
期間	29/06/15 → 2/07/15

存取文件

10.1109/IPFA.2015.7224400

其它文件與鏈接

Link to publication in Scopus

引用此

Yang, Y. G., & Tsui, B.-Y. (2015). A comparison study on the Al-based interfacial layers for Ge MIS devices. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (頁 336-339). 文章 7224400 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224400

Yang, Yi Gin ; Tsui, Bing-Yue. / A comparison study on the Al-based interfacial layers for Ge MIS devices. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 336-339 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{e20495c3cabd4cdd8246d32daf16ca39,

title = "A comparison study on the Al-based interfacial layers for Ge MIS devices",

abstract = "The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.",

author = "Yang, {Yi Gin} and Bing-Yue Tsui",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/IPFA.2015.7224400",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "336--339",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "美國",

}

Yang, YG & Tsui, B-Y 2015, A comparison study on the Al-based interfacial layers for Ge MIS devices. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224400, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 336-339, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, 台灣, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224400

A comparison study on the Al-based interfacial layers for Ge MIS devices. / Yang, Yi Gin; Tsui, Bing-Yue.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 336-339 7224400 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2015-August).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A comparison study on the Al-based interfacial layers for Ge MIS devices

AU - Yang, Yi Gin

AU - Tsui, Bing-Yue

PY - 2015/8/25

Y1 - 2015/8/25

N2 - The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.

AB - The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.

UR - http://www.scopus.com/inward/record.url?scp=84949763887&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2015.7224400

DO - 10.1109/IPFA.2015.7224400

M3 - Conference contribution

AN - SCOPUS:84949763887

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 336

EP - 339

BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

Y2 - 29 June 2015 through 2 July 2015

ER -

Yang YG, Tsui BY. A comparison study on the Al-based interfacial layers for Ge MIS devices. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 336-339. 7224400. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224400

A comparison study on the Al-based interfacial layers for Ge MIS devices

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