A comparison study on the Al-based interfacial layers for Ge MIS devices

Yi Gin Yang, Bing-Yue Tsui

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.

    原文English
    主出版物標題Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面336-339
    頁數4
    ISBN(電子)9781479999286, 9781479999286
    DOIs
    出版狀態Published - 25 8月 2015
    事件22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
    持續時間: 29 6月 20152 7月 2015

    出版系列

    名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
    2015-August

    Conference

    Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
    國家/地區Taiwan
    城市Hsinchu
    期間29/06/152/07/15

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