A comparison of quantum correction models for nanoscale MOS structures under inversion conditions

Yi-Ming Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Quantum correction model features the correction of the inversion layer charge on different classical transport models in semiconductor device simulation. This approach has successfully been of great interest in the recent years. Considering a metal-oxide-semiconductor (MOS) structure in this paper, the Hänsen, the modified local density approximation (MLDA), the density-gradient (DG), the effective potential (EP), and our models are investigated computationally and compared systematically with the result of the Schrödinger-Poisson (SP) model. In terms of the accuracy for (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3) the total inversion charge sheet density, and (4) the average inversion charge depth, these well-established models are examined simultaneously. The DG model requires the solution of a boundary value problem, the EP model overestimates the position of the charge concentration peak and the maximum of the charge concentration, our explicit model demonstrates good accuracy among models.

原文American English
主出版物標題Cross-Disciplinary Applied Research in Materials Science and Technology - Proceedings of the 1st International Meeting on Applied Physics, (APHYS-2003)
發行者Trans Tech Publications Ltd
頁面603-610
頁數8
ISBN(列印)0878499628, 9780878499625
DOIs
出版狀態Published - 三月 2005
事件1st International Meeting on Applied Physics, APHYS-2003 - Badajoz, Spain
持續時間: 13 十月 200318 十月 2003

出版系列

名字Materials Science Forum
480-481
ISSN(列印)0255-5476
ISSN(電子)1662-9752

Conference

Conference1st International Meeting on Applied Physics, APHYS-2003
國家/地區Spain
城市Badajoz
期間13/10/0318/10/03

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