A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You; Pin Su

doi:10.1109/TED.2016.2564424

A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You
, Pin Su^*

^*此作品的通信作者

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

原文	English
文章編號	7482768
頁（從 - 到）	2971-2974
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	63
發行號	7
DOIs	https://doi.org/10.1109/TED.2016.2564424
出版狀態	Published - 7月 2016

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10.1109/TED.2016.2564424

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abstract = "This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.",

keywords = "2-D semiconductors, high-K gate dielectrics, molybdenum disulphide (MoS2), short-channel effects, subthreshold current model, transition metal dichalcogenide (TMD)",

author = "You, \{Wei Xiang\} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

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language = "English",

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AU - Su, Pin

PY - 2016/7

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N2 - This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

AB - This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

KW - 2-D semiconductors

KW - high-K gate dielectrics

KW - molybdenum disulphide (MoS2)

KW - short-channel effects

KW - subthreshold current model

KW - transition metal dichalcogenide (TMD)

UR - https://www.scopus.com/pages/publications/84971571381

U2 - 10.1109/TED.2016.2564424

DO - 10.1109/TED.2016.2564424

M3 - Article

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SN - 0018-9383

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SP - 2971

EP - 2974

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 7482768

ER -

A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

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