A compact model for rapidly shrinking MOSFETs

Chen-Ming Hu

doi:10.1109/IEDM.2001.979485

A compact model for rapidly shrinking MOSFETs

Chen-Ming Hu^*

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

原文	English
頁（從 - 到）	285-288
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979485
出版狀態	Published - 1 12月 2001
事件	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, 美國持續時間: 2 12月 2001 → 5 12月 2001

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10.1109/IEDM.2001.979485

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@article{094cf22787e04e168e4225635c2dac71,

title = "A compact model for rapidly shrinking MOSFETs",

abstract = "BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.",

author = "Chen-Ming Hu",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/IEDM.2001.979485",

language = "English",

pages = "285--288",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - A compact model for rapidly shrinking MOSFETs

AU - Hu, Chen-Ming

PY - 2001/12/1

Y1 - 2001/12/1

N2 - BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

AB - BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

UR - http://www.scopus.com/inward/record.url?scp=0035717786&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979485

DO - 10.1109/IEDM.2001.979485

M3 - Conference article

AN - SCOPUS:0035717786

SN - 0163-1918

SP - 285

EP - 288

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

A compact model for rapidly shrinking MOSFETs

摘要

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