A Compact IGFET Charge Model

Bing J. Sheu, Don L. Scharfetter, Chen-Ming Hu, Donald O. Pederson

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

A new IGFET charge model, consistent with the recently published Compact Short-Channel IGFET Model [1], [2], is presented. It is simple, accurate, and suitable for circuit simulation applications. Charge conservation is guaranteed by using charge as the state variable. The partitioning of channel charge into drain and source components is given significant attention. This partitioning changes smoothly from 40/60 in the saturation region asymptotically to 50/50 in the triode region. The terminal charges are well behaved over all regions of operation. This charge model and its dc characteristic counterpart, derived from the same considrerations of MOS device physics, form a unified model previously unavailable.

原文English
頁(從 - 到)745-748
頁數4
期刊IEEE transactions on circuits and systems
31
發行號8
DOIs
出版狀態Published - 1 1月 1984

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