A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Jian Hsing Lee; Ching Ho Li; Chih Cherng Liao; Yeh Jen Huang; Karuna Nidhi; Li Yang Hong; Ting You Lin; Yeh Ning Jou; Shao Chang Huang; Ke Horng Chen

doi:10.1109/IPFA58228.2023.10249114

A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Jian Hsing Lee^*, Ching Ho Li, Chih Cherng Liao, Yeh Jen Huang, Karuna Nidhi, Li Yang Hong, Ting You Lin, Yeh Ning Jou, Shao Chang Huang, Ke Horng Chen

^*此作品的通信作者

電機工程學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The impacts of skin effect and base push-out effect are found as major cause of failure for high-voltage (HV) transistors during the electrostatic-discharge (ESD) zapping event. The skin effect is caused by that the ESD current or TLP current is a large time-varying current at the transistor turn-on transient. This effect occurs at the backend of transistor. So, most current is localized in the skin depth of backend from the edge. The base push-out effect is caused by the base region expands its area to the heavily doped region of collector. This effect is on the frontend of high-voltage (HV) transistor and induces the snapback occurred at the shortest collector region due to some well implants are implanted into the silicon at an angle with respect to wafer position. If the region is shadowed by photoresist (PR), it is the implant blank region. If the region is not shadowed by PR, it becomes the implant overexposure region. This induces the different reduced surface-field (RESURF) widths in different regions of the drain, which causes the collector width to differ.

原文	English
主出版物標題	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350301649
DOIs	https://doi.org/10.1109/IPFA58228.2023.10249114
出版狀態	Published - 2023
事件	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia 持續時間: 24 7月 2023 → 27 7月 2023

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
卷	2023-July

Conference

Conference	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
國家/地區	Malaysia
城市	Pulau Pinang
期間	24/07/23 → 27/07/23

存取文件

10.1109/IPFA58228.2023.10249114

其它文件與鏈接

Link to publication in Scopus

引用此

Lee, J. H., Li, C. H., Liao, C. C., Huang, Y. J., Nidhi, K., Hong, L. Y., Lin, T. Y., Jou, Y. N., Huang, S. C., & Chen, K. H. (2023). A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event. 於 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2023-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA58228.2023.10249114

Lee, Jian Hsing ; Li, Ching Ho ; Liao, Chih Cherng 等. / A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event. 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{ed78dfa8a45c46d6a5f041c3edd4a045,

title = "A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event",

abstract = "The impacts of skin effect and base push-out effect are found as major cause of failure for high-voltage (HV) transistors during the electrostatic-discharge (ESD) zapping event. The skin effect is caused by that the ESD current or TLP current is a large time-varying current at the transistor turn-on transient. This effect occurs at the backend of transistor. So, most current is localized in the skin depth of backend from the edge. The base push-out effect is caused by the base region expands its area to the heavily doped region of collector. This effect is on the frontend of high-voltage (HV) transistor and induces the snapback occurred at the shortest collector region due to some well implants are implanted into the silicon at an angle with respect to wafer position. If the region is shadowed by photoresist (PR), it is the implant blank region. If the region is not shadowed by PR, it becomes the implant overexposure region. This induces the different reduced surface-field (RESURF) widths in different regions of the drain, which causes the collector width to differ.",

keywords = "Electromagnetic (EM), Electrostatic-Discharge (ESD), Skin Effect, Transmission-Line Pulse (TLP)",

author = "Lee, {Jian Hsing} and Li, {Ching Ho} and Liao, {Chih Cherng} and Huang, {Yeh Jen} and Karuna Nidhi and Hong, {Li Yang} and Lin, {Ting You} and Jou, {Yeh Ning} and Huang, {Shao Chang} and Chen, {Ke Horng}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 ; Conference date: 24-07-2023 Through 27-07-2023",

year = "2023",

doi = "10.1109/IPFA58228.2023.10249114",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023",

address = "United States",

}

Lee, JH, Li, CH, Liao, CC, Huang, YJ, Nidhi, K, Hong, LY, Lin, TY, Jou, YN, Huang, SC & Chen, KH 2023, A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event. 於 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷 2023-July, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023, Pulau Pinang, Malaysia, 24/07/23. https://doi.org/10.1109/IPFA58228.2023.10249114

A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event. / Lee, Jian Hsing; Li, Ching Ho; Liao, Chih Cherng 等.
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2023-July).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

AU - Lee, Jian Hsing

AU - Li, Ching Ho

AU - Liao, Chih Cherng

AU - Huang, Yeh Jen

AU - Nidhi, Karuna

AU - Hong, Li Yang

AU - Lin, Ting You

AU - Jou, Yeh Ning

AU - Huang, Shao Chang

AU - Chen, Ke Horng

PY - 2023

Y1 - 2023

N2 - The impacts of skin effect and base push-out effect are found as major cause of failure for high-voltage (HV) transistors during the electrostatic-discharge (ESD) zapping event. The skin effect is caused by that the ESD current or TLP current is a large time-varying current at the transistor turn-on transient. This effect occurs at the backend of transistor. So, most current is localized in the skin depth of backend from the edge. The base push-out effect is caused by the base region expands its area to the heavily doped region of collector. This effect is on the frontend of high-voltage (HV) transistor and induces the snapback occurred at the shortest collector region due to some well implants are implanted into the silicon at an angle with respect to wafer position. If the region is shadowed by photoresist (PR), it is the implant blank region. If the region is not shadowed by PR, it becomes the implant overexposure region. This induces the different reduced surface-field (RESURF) widths in different regions of the drain, which causes the collector width to differ.

AB - The impacts of skin effect and base push-out effect are found as major cause of failure for high-voltage (HV) transistors during the electrostatic-discharge (ESD) zapping event. The skin effect is caused by that the ESD current or TLP current is a large time-varying current at the transistor turn-on transient. This effect occurs at the backend of transistor. So, most current is localized in the skin depth of backend from the edge. The base push-out effect is caused by the base region expands its area to the heavily doped region of collector. This effect is on the frontend of high-voltage (HV) transistor and induces the snapback occurred at the shortest collector region due to some well implants are implanted into the silicon at an angle with respect to wafer position. If the region is shadowed by photoresist (PR), it is the implant blank region. If the region is not shadowed by PR, it becomes the implant overexposure region. This induces the different reduced surface-field (RESURF) widths in different regions of the drain, which causes the collector width to differ.

KW - Electromagnetic (EM)

KW - Electrostatic-Discharge (ESD)

KW - Skin Effect

KW - Transmission-Line Pulse (TLP)

UR - http://www.scopus.com/inward/record.url?scp=85173562764&partnerID=8YFLogxK

U2 - 10.1109/IPFA58228.2023.10249114

DO - 10.1109/IPFA58228.2023.10249114

M3 - Conference contribution

AN - SCOPUS:85173562764

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023

Y2 - 24 July 2023 through 27 July 2023

ER -

Lee JH, Li CH, Liao CC, Huang YJ, Nidhi K, Hong LY 等. A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event. 於 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA58228.2023.10249114

A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

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