A CMOS-MEMS Pressure Sensor with Integrated Front-End for Chemical Vapor Deposition Systems

Tsung Heng Tsai*, Song You Hong

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, a CMOS-MEMS capacitive pressure sensor is designed for low-pressure chemical vapor deposition (LPCVD) systems. A buffer layer is utilized in the proposed pressure transducer to effectively protect the sensing diaphragm from breaking down while maintaining high linearity with a compact dimension. A low-power front-end readout circuit is implemented on the same chip to convert the capacitance variance to digital outputs according to the pressure change in the chemical vapor deposition process, near vacuum in this design. The presented device is fabricated through UMC 0.18μm 1P6M CMOS process, and in-house post-processes. The chip size is 1.5×1.5 mm2. Experimental results show that the sensitivity of 0.655 fF/Pa is realized in the range of 0 - 600 Pa.

原文English
主出版物標題2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350303872
DOIs
出版狀態Published - 2023
事件2023 IEEE SENSORS, SENSORS 2023 - Vienna, 奧地利
持續時間: 29 10月 20231 11月 2023

出版系列

名字Proceedings of IEEE Sensors
ISSN(列印)1930-0395
ISSN(電子)2168-9229

Conference

Conference2023 IEEE SENSORS, SENSORS 2023
國家/地區奧地利
城市Vienna
期間29/10/231/11/23

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