A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

Ming-Dou Ker; Jung Sheng Chen; Ching Yun Chu

doi:10.1109/ISCAS.2004.1328126

A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

Ming-Dou Ker^*, Jung Sheng Chen, Ching Yun Chu

^*此作品的通信作者

研究成果: Conference article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 kHz.

原文	English
頁（從 - 到）	41-44
頁數	4
期刊	Proceedings - IEEE International Symposium on Circuits and Systems
卷	1
DOIs	https://doi.org/10.1109/ISCAS.2004.1328126
出版狀態	Published - 7 9月 2004
事件	2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada 持續時間: 23 5月 2004 → 26 5月 2004

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10.1109/ISCAS.2004.1328126

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title = "A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device",

abstract = "A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 kHz.",

author = "Ming-Dou Ker and Chen, {Jung Sheng} and Chu, {Ching Yun}",

year = "2004",

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day = "7",

doi = "10.1109/ISCAS.2004.1328126",

language = "English",

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journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

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T1 - A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

AU - Ker, Ming-Dou

AU - Chen, Jung Sheng

AU - Chu, Ching Yun

PY - 2004/9/7

Y1 - 2004/9/7

N2 - A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 kHz.

AB - A new sub-1-V CMOS bandgap voltage reference without using low threshold voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25 μm CMOS process. The experimental results show that, at the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV with an effective temperature coefficient of 58.1 ppm/°C while DC current is 28 μA. At 0.85 V supply voltage, the measured power noise rejection ratio is -33.2 dB at 10 kHz.

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U2 - 10.1109/ISCAS.2004.1328126

DO - 10.1109/ISCAS.2004.1328126

M3 - Conference article

AN - SCOPUS:4344704869

SN - 0271-4310

VL - 1

SP - 41

EP - 44

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - 2004 IEEE International Symposium on Cirquits and Systems - Proceedings

Y2 - 23 May 2004 through 26 May 2004

ER -

A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

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