A closed-form quantum dark space model for predicting the electrostatic integrity of germanium MOSFETs with high-k gate dielectric

Keyphrases

• Accurate Model 33%
• Barrier Height 33%
• Channel Doping 33%
• Closed-form Model 33%
• Dark Spaces 100%
• Doping Profile 33%
• Effective Mass 33%
• Electrostatic Integrity 100%
• Gate Dielectric 33%
• Ge MOSFET 33%
• Germanium MOSFET 100%
• High-k Gate Dielectrics 100%
• Quantum Confinement 33%
• Retrograde Doping 33%
• Space Model 100%
• Substrate Bias 33%
• Subthreshold Swing 33%
• Surface Electric Field 33%

Engineering

• Barrier Height 33%
• Closed Form 100%
• Gate Dielectric 100%
• Ge Device 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Quantum Confinement 33%
• Substrate Bias 33%
• Surface Electric Field 33%

Physics

• Dielectric Material 100%
• Electric Field 33%
• Electrostatics 100%
• Field Effect Transistor 100%