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A closed-form quantum dark space model for predicting the electrostatic integrity of germanium MOSFETs with high-k gate dielectric
Yu Sheng Wu
*
,
Pin Su
*
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引文 斯高帕斯(Scopus)
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Keyphrases
High-k Gate Dielectrics
100%
Electrostatic Integrity
100%
Germanium MOSFET
100%
Dark Spaces
100%
Space Model
100%
Gate Dielectric
33%
Accurate Model
33%
Barrier Height
33%
Subthreshold Swing
33%
Substrate Bias
33%
Doping Profile
33%
Channel Doping
33%
Quantum Confinement
33%
Effective Mass
33%
Ge MOSFET
33%
Surface Electric Field
33%
Retrograde Doping
33%
Closed-form Model
33%
Engineering
Gate Dielectric
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Closed Form
100%
Barrier Height
33%
Substrate Bias
33%
Quantum Confinement
33%
Surface Electric Field
33%
Ge Device
33%
Physics
Electrostatics
100%
Field Effect Transistor
100%
Dielectric Material
100%
Electric Field
33%