A Charge-Based Capacitance Model of Short-Channel MOSFET's

Steve S. Chung*

*此作品的通信作者

    研究成果: Article同行評審

    11 引文 斯高帕斯(Scopus)

    摘要

    A new quasistatic two-dimensional (2-D) intrinsic capacitance model for short-channel MOSFET's has been proposed. It was derived based on a physically based charge sharing scheme and implemented using a quasistatic solution of a MOS device simulator. 2-D field-induced mobility degradation, velocity saturation, and short channel effects are included in the model. In this model, charge conservation holds and channel charge partitioning are properly treated. The simulation results clearly show the importance of 2-D field-induced effects to short-channel MOS devices. Comparison of the simulated results with reported experimentally measured data shows that the proposed model is far more reliable than the analytical model. The proposed method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS integrated circuits.

    原文English
    文章編號21813
    頁(從 - 到)1-7
    頁數7
    期刊IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
    8
    發行號1
    DOIs
    出版狀態Published - 1 1月 1989

    指紋

    深入研究「A Charge-Based Capacitance Model of Short-Channel MOSFET's」主題。共同形成了獨特的指紋。

    引用此