A body-contact SOI MOSFET model for circuit simulation

Pin Su, S. K.H. Fung, F. Assaderaghi, Chen-Ming Hu

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.

原文English
主出版物標題1999 IEEE International SOI Conference, SOI 1999 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面50-51
頁數2
ISBN(列印)0780354567, 9780780354562
DOIs
出版狀態Published - 1 1月 1999
事件25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999 - Rohnert Park, 美國
持續時間: 4 10月 19997 10月 1999

出版系列

名字1999 IEEE International SOI Conference, SOI 1999 - Proceedings

Conference

Conference25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999
國家/地區美國
城市Rohnert Park
期間4/10/997/10/99

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