A bending n-well ballast layout to improve esd robustness in fully-silicided CMOS technology

Yong Ru Wen*, Ming-Dou Ker, Wen Yi Chen

*此作品的通信作者

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    Ballast technique has been reported as a cost effective method to improve ESD robustness of fully-silicided devices without using silicide block. In this work, a new ballast technique, the bending N-Well (BNW) ballast structure, is proposed to enhance ESD robustness of fully-silicided NMOS. With a deep N-Well to cover the fully-silicided NMOS with BNW ballast structure, ESD robustness of the NMOS can be further improved by enhancing the turn-on uniformity among the multi-fingers of the NMOS.

    原文English
    主出版物標題2010 IEEE International Reliability Physics Symposium, IRPS 2010
    頁面857-860
    頁數4
    DOIs
    出版狀態Published - 20 10月 2010
    事件2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
    持續時間: 2 5月 20106 5月 2010

    出版系列

    名字IEEE International Reliability Physics Symposium Proceedings
    ISSN(列印)1541-7026

    Conference

    Conference2010 IEEE International Reliability Physics Symposium, IRPS 2010
    國家/地區Canada
    城市Garden Grove, CA
    期間2/05/106/05/10

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