A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
Faiz Aizad Fatah, Yueh Chin Lin, Ren Xuan Liu, Kai Chun Yang, Tai We Lin, Heng-Tung Hsu, Jung Hsiang Yang, Yasuyuki Miyamoto, Hiroshi Iwai, Chen-Ming Hu, Sayeef Salahuddin, Edward Yi Chang
研究成果: Article › 同行評審
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斯高帕斯(Scopus)