A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
- Faiz Aizad Fatah
- , Yueh Chin Lin
- , Ren Xuan Liu
- , Kai Chun Yang
- , Tai We Lin
- , Heng-Tung Hsu
- , Jung Hsiang Yang
- , Yasuyuki Miyamoto
- , Hiroshi Iwai
- , Chen-Ming Hu
- , Sayeef Salahuddin
- , Edward Yi Chang
研究成果 › 同行評審
3
引文
斯高帕斯（Scopus）