@article{e58c069fcdc94511ace4c66155e24864,
title = "A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications",
abstract = "A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 × 104 at VDS = 0.5V and a high fT of 378GHz and fmax of 214GHz at VDS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.",
author = "Fatah, {Faiz Aizad} and Lin, {Yueh Chin} and Liu, {Ren Xuan} and Yang, {Kai Chun} and Lin, {Tai We} and Heng-Tung Hsu and Yang, {Jung Hsiang} and Yasuyuki Miyamoto and Hiroshi Iwai and Chen-Ming Hu and Sayeef Salahuddin and Chang, {Edward Yi}",
year = "2016",
month = feb,
day = "1",
doi = "10.7567/APEX.9.026502",
language = "English",
volume = "9",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "2",
}