A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

Jeng Han Tsai*, Yu Hui Lin, Yi Fan Tsao, Yuan Wang, Arpan Desai, Ping Hsun Chiu, Heng Tung Hsu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.

原文English
主出版物標題2023 Asia-Pacific Microwave Conference, APMC 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面171-173
頁數3
ISBN(電子)9781665494182
DOIs
出版狀態Published - 2023
事件31st Asia-Pacific Microwave Conference, APMC 2023 - Taipei, Taiwan
持續時間: 5 12月 20238 12月 2023

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
ISSN(電子)2690-3946

Conference

Conference31st Asia-Pacific Microwave Conference, APMC 2023
國家/地區Taiwan
城市Taipei
期間5/12/238/12/23

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