A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

Ming Chun Hong, Yao Jen Chang, Yu Chen Hsin, Liang Ming Liu, Kuan Ming Chen, Yi Hui Su, Guan Long Chen, Shan Yi Yang, I. Jung Wang, Sk Ziaur Rahaman, Hsin Han Lee, Shih Ching Chiu, Chen Yi Shih, Chih Yao Wang, Fang Ming Chen, Jeng Hua Wei, Shyh Shyuan Sheu, Wei Chung Lo, Minn Tsong Lin, Chih I. WuTuo Hung Hou*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).

原文English
主出版物標題2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面379-380
頁數2
ISBN(電子)9781665497725
DOIs
出版狀態Published - 2022
事件2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
持續時間: 12 6月 202217 6月 2022

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2022-June
ISSN(列印)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區United States
城市Honolulu
期間12/06/2217/06/22

指紋

深入研究「A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer」主題。共同形成了獨特的指紋。

引用此