@inproceedings{7ab56f6b6ace454b945a303068dbf9a5,
title = "A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement",
abstract = "Test structure for evaluating gate oxide properties on the trench sidewall in 4H-SiC is proposed. Using the thick bottom oxide and poly-Silicon spacer structure, we are able to measure the capacitance characteristics directly and extract the interface state density. It is observed that typical NO annealing process cannot passivate the trench etching induced defects effectively.",
author = "Huang, {Huai Lin} and Hsuesh, {Li Tien} and Tu, {Yen Cheng} and Tsui, {Bing Yue}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024 ; Conference date: 15-04-2024 Through 18-04-2024",
year = "2024",
doi = "10.1109/ICMTS59902.2024.10520701",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings",
address = "美國",
}