TY - GEN
T1 - A 45μW, 9.5MHz current-reused RC oscillator using a swing-boosting technique
AU - Lu, Shao Yung
AU - Liao, Yu-Te
PY - 2017/6/5
Y1 - 2017/6/5
N2 - This paper presents a differential relaxation oscillator that uses swing-boost and current-reused techniques. Output swing boosting is adopted to improve noise performance, and current-reused architecture reduces the power consumption of the oscillator. Since oscillation frequency is defined by the resistor and capacitor, combining opposite temperature coefficient resistors helps eliminate temperature-caused frequency drifts. The proposed RC oscillator is fabricated using 0.18 urn standard CMOS technology. The design achieves an FOM of 161.5 dBc/Hz with a phase noise of -108.5 dBc/Hz at 100kHz offset and an Allan deviation floor of 5.2 ppm at a 2-second integral window while consuming 45 μW. The measured temperature coefficient is 307 ppm/°C in the temperature range of -20-100 °C, and the measured period jitter is 10.5 psrms.
AB - This paper presents a differential relaxation oscillator that uses swing-boost and current-reused techniques. Output swing boosting is adopted to improve noise performance, and current-reused architecture reduces the power consumption of the oscillator. Since oscillation frequency is defined by the resistor and capacitor, combining opposite temperature coefficient resistors helps eliminate temperature-caused frequency drifts. The proposed RC oscillator is fabricated using 0.18 urn standard CMOS technology. The design achieves an FOM of 161.5 dBc/Hz with a phase noise of -108.5 dBc/Hz at 100kHz offset and an Allan deviation floor of 5.2 ppm at a 2-second integral window while consuming 45 μW. The measured temperature coefficient is 307 ppm/°C in the temperature range of -20-100 °C, and the measured period jitter is 10.5 psrms.
KW - Current-reuse technique
KW - Differential relaxation oscillator
KW - Swing boosting
UR - http://www.scopus.com/inward/record.url?scp=85021454676&partnerID=8YFLogxK
U2 - 10.1109/VLSI-DAT.2017.7939665
DO - 10.1109/VLSI-DAT.2017.7939665
M3 - Conference contribution
AN - SCOPUS:85021454676
T3 - 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017
BT - 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017
Y2 - 24 April 2017 through 27 April 2017
ER -