A 40-nm-Gate InAs/In 0.7Ga 0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f T

Chien I. Kuo; Heng-Tung Hsu; Chien Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu Lin Chen; Dhrubes Biswas

doi:10.1109/ICIPRM.2009.5012458

A 40-nm-Gate InAs/In _0.7Ga _0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f _T

Chien I. Kuo, Heng-Tung Hsu, Chien Ying Wu, Edward Yi Chang, Yasuyuki Miyamoto, Yu Lin Chen, Dhrubes Biswas

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A 40-nm T-gate high-electronmobility-transistor with InAs/In _0.7Ga _0.3As composite-channel has been fabricated. The device exhibits a transconductance (g _m) of 2200 mS/mm, a cutoff frequency f _T of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or submillimeter-wave applications.

原文	English
主出版物標題	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
頁面	128-131
頁數	4
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012458
出版狀態	Published - 2009
事件	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, 美國持續時間: 10 5月 2009 → 14 5月 2009

出版系列

名字	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN（列印）	1092-8669

Conference

Conference	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
國家/地區	美國
城市	Newport Beach, CA
期間	10/05/09 → 14/05/09

存取文件

10.1109/ICIPRM.2009.5012458

其它文件與鏈接

Link to publication in Scopus

引用此

Kuo, C. I., Hsu, H.-T., Wu, C. Y., Chang, E. Y., Miyamoto, Y., Chen, Y. L., & Biswas, D. (2009). A 40-nm-Gate InAs/In _0.7Ga _0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f _T. 於 IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (頁 128-131). 文章 5012458 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012458

@inproceedings{79ffffa60da34f728f84d6f5fa453f60,

title = "A 40-nm-Gate InAs/In 0.7Ga 0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f T",

abstract = "A 40-nm T-gate high-electronmobility-transistor with InAs/In 0.7Ga 0.3As composite-channel has been fabricated. The device exhibits a transconductance (g m) of 2200 mS/mm, a cutoff frequency f T of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or submillimeter-wave applications.",

keywords = "HEMTs, InAs-channel, Sub-millimeterwave",

author = "Kuo, {Chien I.} and Heng-Tung Hsu and Wu, {Chien Ying} and Chang, {Edward Yi} and Yasuyuki Miyamoto and Chen, {Yu Lin} and Dhrubes Biswas",

year = "2009",

doi = "10.1109/ICIPRM.2009.5012458",

language = "English",

isbn = "9781424434336",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "128--131",

booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",

note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Kuo, CI, Hsu, H-T, Wu, CY, Chang, EY, Miyamoto, Y, Chen, YL & Biswas, D 2009, A 40-nm-Gate InAs/In _0.7Ga _0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f _T. 於 IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012458, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 頁 128-131, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, 美國, 10/05/09. https://doi.org/10.1109/ICIPRM.2009.5012458

A 40-nm-Gate InAs/In _0.7Ga _0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f _T. / Kuo, Chien I.; Hsu, Heng-Tung; Wu, Chien Ying 等.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 128-131 5012458 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A 40-nm-Gate InAs/In 0.7Ga 0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f T

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Wu, Chien Ying

AU - Chang, Edward Yi

AU - Miyamoto, Yasuyuki

AU - Chen, Yu Lin

AU - Biswas, Dhrubes

PY - 2009

Y1 - 2009

N2 - A 40-nm T-gate high-electronmobility-transistor with InAs/In 0.7Ga 0.3As composite-channel has been fabricated. The device exhibits a transconductance (g m) of 2200 mS/mm, a cutoff frequency f T of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or submillimeter-wave applications.

AB - A 40-nm T-gate high-electronmobility-transistor with InAs/In 0.7Ga 0.3As composite-channel has been fabricated. The device exhibits a transconductance (g m) of 2200 mS/mm, a cutoff frequency f T of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or submillimeter-wave applications.

KW - HEMTs

KW - InAs-channel

KW - Sub-millimeterwave

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U2 - 10.1109/ICIPRM.2009.5012458

DO - 10.1109/ICIPRM.2009.5012458

M3 - Conference contribution

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SN - 9781424434336

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

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BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

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Kuo CI, Hsu HT, Wu CY, Chang EY, Miyamoto Y, Chen YL 等. A 40-nm-Gate InAs/In _0.7Ga _0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f _T. 於 IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 128-131. 5012458. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2009.5012458