@inproceedings{dfbf92ea83e143f998219edb5e08b2bf,
title = "A 4-7 GHz Broadband Cryogenic GaAs mHEMT LNA with a Flatness Gain Variation of ±1.2 dB",
abstract = "In this paper, a cryogenic low noise amplifier (LNA) consisting of three common-source stages is designed in a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) process for quantum computer applications. By using a cryogenic HEMT model, this LNA operates at 4 K and features wide bandwidth and high gain. It applies a filter input matching network and a bandwidth extension topology in the input and interstage matching, respectively. Characterized over the frequency range of 4 to 7 GHz, the LNA demonstrates a high gain level of 28.6 ± 2 dB with power consumption of 7.2 mW. In the low-power mode, it still maintains a gain level of 21.3 ± 1.2 dB with power consumption of 1.9 mW.",
keywords = "GaAs, broadband, cryogenic low noise amplifier, mHEMT",
author = "Li, {Che Hao} and Su, {Tzu Han} and Kuo, {Chien Nan}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024 ; Conference date: 19-05-2024 Through 22-05-2024",
year = "2024",
doi = "10.1109/ISCAS58744.2024.10558695",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ISCAS 2024 - IEEE International Symposium on Circuits and Systems",
address = "美國",
}